The RFP15N12 N-Channel FET is an N-Channel enhancement-mode power field-effect transistor that was designed for use in switching regulator and switching converter circuits.
Drain-Source Voltage: 120V
Drain-Source ON Resistance: 0.15 Ohm
Drain-Gate Voltage: 120V
Continuous RMS Drain-Current: 15A
Power Diss: 75W
It can be operated directly from integrated circuits.
MFG: Harris Semiconductor